(see reverse side) mpq3798 MPQ3799 pnp silicon quad transistor to-116 case description: the central semiconductor mpq3798, MPQ3799 types are comprised of four independent silicon pnp transistors mounted in a 14 pin dip, designed for low level and low noise applications. maximum ratings: (t a =25c) symbol mpq3798 MPQ3799 units collector-base voltage v cbo 60 60 v collector-emitter voltage v ceo 40 60 v emitter-base voltage v ebo 5.0 v collector current i c 50 ma power dissipation (each transistor) p d 500 mw power dissipation (total package) p d 900 mw operating and storage junction temperature t j ,t stg -65 to +150 c thermal resistance (total package) ja 139 c/w electrical characteristics: (t a =25c unless otherwise noted) mpq3798 MPQ3799 symbol test conditions min max min max units i cbo v cb =50v 10 10 na i ebo v eb =3.0v 20 20 na bv cbo i c =10 a 60 60 v bv ceo i c =10ma 40 60 v bv ebo i e =10 a 5.0 5.0 v v ce(sat) i c =100a, i b =10a 0.2 0.2 v v ce(sat) i c =1.0ma, i b =100a 0.25 0.25 v v be(sat) i c =100a, i b =10a 0.7 0.7 v v be(sat) i c =1.0ma, i b =100a 0.8 0.8 v h fe v ce =5.0v, i c =10a 100 225 h fe v ce =5.0v, i c =100a 150 300 h fe v ce =5.0v, i c =500a 150 300 h fe v ce =5.0v, i c =10ma 125 250 f t v ce =5.0v, i c =1.0ma, f=100mhz 60 60 mhz c ob v cb =5.0v, i e =0, f=1.0mhz 4.0 4.0 pf c ib v eb =0.5v, i c =0, f=1.0mhz 8.0 8.0 pf nf v ce =10v, i c =100a, r s =3k ? , f=10hz to 15.7khz 2.5 typ 1.5 typ db
mpq3798 / MPQ3799 pnp silicon quad trasistor to-116 case - mechanical outline .220(5.59) .280(7.11) 14 1 8 7 maximum .325(8.26) 15 0 .008(0.20) .015(0.38) .785(19.94) .660(16.76) maximum .200(5.08) .015(0.38) .023(0.58) .030(0.76) .070(1.78) .290(7.37) .310(7.87) minimum .020(0.51) .100(2.54) minimum .090(2.29) .110(2.79) .190(4.83) .210(5.33) all dimensions in inches (mm). pin configuration 8 17 q q q q c cbe eb c cbe eb 1 4 2 3 14
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